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Quantity | Price |
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1+ | $0.732 |
10+ | $0.382 |
100+ | $0.337 |
500+ | $0.258 |
1000+ | $0.220 |
2500+ | $0.199 |
10000+ | $0.168 |
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Multiple: 5
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoBD679
Newark Part No.24M0737
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
Transition Frequency-
Power Dissipation Pd40W
Continuous Collector Current4A
DC Collector Current4A
Power Dissipation40W
RF Transistor CaseSOT-32
No. of Pins3Pins
Transistor Case StyleSOT-32
DC Current Gain hFE750hFE
Transistor MountingThrough Hole
Operating Temperature Max150°C
DC Current Gain hFE Min750hFE
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Good hFE linearity
- High fT frequency
- Well-controlled hFE parameter for increased reliability
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
40W
DC Collector Current
4A
RF Transistor Case
SOT-32
Transistor Case Style
SOT-32
Transistor Mounting
Through Hole
DC Current Gain hFE Min
750hFE
Qualification
-
Collector Emitter Voltage Max
80V
Transition Frequency
-
Continuous Collector Current
4A
Power Dissipation
40W
No. of Pins
3Pins
DC Current Gain hFE
750hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for BD679
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability