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SI1013R-T1-GE3
Power MOSFET, P Channel, 20 V, 400 mA, 1.2 ohm, SC-75A, Surface Mount
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No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1013R-T1-GE3Copy
Newark Part No.16P3670
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id400mA
Drain Source On State Resistance1.2ohm
On Resistance Rds(on)0.8ohm
Transistor MountingSurface Mount
Power Dissipation Pd150mW
Rds(on) Test Voltage6V
Transistor Case StyleSC-75A
Gate Source Threshold Voltage Max450mV
Power Dissipation150mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
6V
Gate Source Threshold Voltage Max
450mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
400mA
On Resistance Rds(on)
0.8ohm
Power Dissipation Pd
150mW
Transistor Case Style
SC-75A
Power Dissipation
150mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate