VTP4085SH

The VTP4085SH is a Silicon Photodiode designed for low junction capacitance. Large area planar silicon mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. Low junction capacitance permits fast response time. The lower the capacitance, the faster the response of the photodiode when the RC time constant is limiting factor. Also, speed can be further increased by reverse biasing the photodiodes. This device has excellent response in the IR region and well matched to IR LEDs (VTE series). Photodiode is made with the VTP process are suitable for operation under reverse bias conditions but may be used in the photovoltaic mode. Low dark currents under reverse bias are also a feature of this series.

• Visible to IR spectral range
• 1 to 2% Linearity over 7 to 9 decades
• Low dark currents
• High shunt resistance
• Low capacitance