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Cantidad | Precio en USD |
---|---|
1+ | $1.310 |
10+ | $1.310 |
25+ | $1.310 |
50+ | $1.310 |
100+ | $1.310 |
250+ | $1.310 |
500+ | $1.310 |
Información del producto
Resumen del producto
2ED020I12FIXUMA1 is a high voltage, high-speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high-side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3V and 5V TTL. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high-frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2kV. In addition, a general-purpose operational amplifier and a general-purpose comparator are provided which may be used for instance for current measurement or overcurrent detection.
- On-chip 1 ohm bootstrap diode
- CMOS Schmitt-triggered inputs with pull-down, non-inverting inputs
- Interlocking inputs, dedicated shutdown input with pull-up
- Power supply operating range from 14 to 18V
- High dV/dt immunity, matched propagation delay for both channels
- Low power consumption, general purpose operational amplifier
- 2.4mA typ high side quiescent supply current at (VSH = 15V)
- 85ns typ turn-on propagation delay at (GNDH = 0V 20% Vout)
- 20MHz typ OP gain-bandwidth product
- Storage temperature range from -55°C to 150°C, DSO-18 package
Especificaciones técnicas
2Canales
High Side and Low Side
18Pines
SOIC
Inverting
2A
18V
125°C
85ns
-
No SVHC (21-Jan-2025)
Isolated
IGBT, MOSFET, SiC MOSFET
0
Surface Mount
1A
14V
-40°C
85ns
-
MSL 3 - 168 hours
Documentos técnicos (1)
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto