FM25CL64B-DGTR

FM25CL64B-DGTR is a FM25CL64B is a 64Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. It performs write operations at bus speed. No write delays are incurred. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. It is ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• 64Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 20MHz frequency
• Direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1), sophisticated write protection scheme
• Hardware protection using the write protect active-low (WP) pin
• Software protection using write disable instruction
• Low power consumption, 200μA active current at 1MHz
• Low-voltage operation: VDD = 2.7V to 3.65V, 8-pin DFN package
• Industrial temperature range from –40°C to +85°C