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1+ | $0.757 |
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500+ | $0.757 |
Información del producto
Resumen del producto
IR21844SPBF is a high voltage, high-speed power MOSFET and IGBT half-bridge driver with dependent high and low side referenced output channels. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- Floating channel designed for bootstrap operation, fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune, IN/active low SD input logic
- Gate drive supply range from 10 to 20V, undervoltage lockout for both channels
- 3.3V and 5V input logic compatible, matched propagation delay for both channels
- Logic and power ground +/- 5V offset, lower di/dt gate driver for better noise immunity
- Output source/sink current capability 1.4A/1.8A, cross conduction prevention logic
- Dead time range program 0.4 to 5us, VSS/COM ground pins
- Turn-on propagation delay is 680nsec typ (VS=0V, TA=25°C)
- Turn-off propagation delay is 270nsec typ (VS=0V or 600V, TA=25°C)
- 14 lead SOIC package, ambient temperature range from -40 to 125°C
Especificaciones técnicas
2Canales
Half Bridge
0
SOIC
Non-Inverting
2.3
20
125
270
-
No SVHC (21-Jan-2025)
-
IGBT, MOSFET
14Pines
Surface Mount
1.9
10
-40
680
-
MSL 3 - 168 hours
Documentos técnicos (3)
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Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto