IRF530NSTRLPBF
MOSFET de Potencia, Canal N, 100 V, 17 A, 0.09 ohm, TO-263 (D2PAK), Montaje Superficial
¿Necesita más?
| Tipo de paquete | Cantidad | Precio unitario: | Total (Dólares USD) |
|---|---|---|---|
| Cinta adhesiva | 1 | $3.140 | $3.14 |
| Total (Dólares USD) Precio en USD | $3.14 | ||
| Cantidad | Precio en USD |
|---|---|
| 1+ | $3.140 |
| 50+ | $1.670 |
| 100+ | $1.540 |
| 250+ | $1.510 |
| 500+ | $1.470 |
| 1000+ | $1.440 |
| 2500+ | $1.410 |
| 5000+ | $1.390 |
Información del producto
Resumen del producto
The IRF530NSTRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Fast switching
- Fully avalanche rating
Especificaciones técnicas
0
100
0
TO-263 (D2PAK)
0
4
3Pines
-
MSL 1 - Unlimited
N Channel
17
0.09
Surface Mount
10
70
175
-
No SVHC (25-Jun-2025)
Documentos técnicos (1)
Alternativas para el número de pieza IRF530NSTRLPBF
1 producto (s) encontrado (s)
Productos relacionados
5 productos encontrados
Legislación y medioambiente
RoHS
RoHS
Certificado de conformidad del producto