VTB5051JH

The VTB5051JH is a Planar Silicon Photodiode designed to exhibit very high shunt resistance, a characteristic which leads to low offsets when used in high gain trans-impedance op-amp circuits. Chip is isolated from the case. The third lead allows the case to be grounded. Blue enhanced silicon photodiode in a three lead hermetic TO flat window package with 14.8mm² active area designed for spectral response between 320 and 1100nm. This series of P on N silicon planar photodiode has been designed for optimum response through the visible part of the spectrum. This photodiode is primarily intended to be used in photovoltaic mode but may be used with a small reverse bias.

• UV to IR spectral range
• Medium size active area
• Three lead package
• 1 to 2% Linearity over 7 to 9 decades
• Very low dark current