VTT9102H

The VTT9102H is a NPN Silicon Phototransistor coated with a lens of epoxy and a 0.63mm² active area designed for spectral response between 400 and 1050nm. Phototransistor is photodiode-amplifier combination integrated within a single silicon chip and permits to ever-come the major limitation of photodiode of unity gain. The phototransistor signal is internally amplified and phototransistor provides an alternative to photodiode because there is no need to have external circuitry for amplification. The chip is protected with a lens of clear epoxy. The base connection is brought out allowing conventional transistor biasing. This device is spectrally matched to any of PerkinElmer IREDs.

• Visible to IR spectral range
• Low dark current
• Fast response
• Same general electrical characteristics as familiar signal transistors

Aplicaciones

Instrumentación y Medida, Electrónica de Consumo