74AUP2G132DC,125

74AUP2G132DC,125 is a dual 2-input NAND gate with schmitt-trigger inputs. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8V to 3.6V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. It complies with JEDEC standards (JESD8-12 (0.8V to 1.3V), JESD8-11 (0.9V to 1.65V), JESD8-7 (1.65V to 1.95V), JESD8-5 (2.3V to 2.7V), JESD8C (2.7V to 3.6V). It features ESD protection (HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000V, CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000V). It is used in applications such as wave and pulse shaper, astable multivibrator, monostable multivibrator.

• CMOS low power dissipation, high noise immunity
• Latch-up performance exceeds 100mA per JESD 78 Class II Level B
• Overvoltage tolerant inputs to 3.6V, low noise overshoot and undershoot <lt/>10% of VCC
• IOFF circuitry provides partial power-down mode operation
• Input leakage current is ±0.1μA maximum at (VI=GND to 3.6V;VCC = 0V to 3.6V, Tamb = 25°C)
• Supply current is 0.5μA maximum at (VI=GND or VCC;IO = 0A;VCC = 0.8V to 3.6V, Tamb = 25°C)
• Input capacitance is 1.1pF typical at (VI=GND or VCC;VCC = 0V to 3.6V, Tamb = 25°C)
• Propagation delay is 22.5ns typical at (VCC = 0.8V, CL = 5pF, Tamb = 25°C)
• Operating temperature range from -40°C to +125°C
• VSSOP8 package