GAN063-650WSAQ

GAN063-650WSAQ is a 650V, 50mohm Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies - offering superior reliability and performance. The applications include hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, and UPS inverters, and servo motor drives.

• Ultra-low reverse recovery charge, simple gate drive (0 to +10/12V), robust gate oxide (±20V)
• High gate threshold voltage (+4V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode, transient over-voltage capability (800V)
• Drain-source voltage is 650V max (55°C ≤ Tj ≤ 175°C)
• Drain current is 34.5A max (VGS = 10V; Tmb = 25°C), total power dissipation is 143W max (Tmb = 25°C)
• Drain-source on-state resistance is 50mohm typ (VGS = 10V; ID = 25A; Tj = 25°C)
• Gate-drain charge is 4nC typ (ID = 25A; VDS = 400V; VGS = 10V; Tj = 25°C)
• Total gate charge is 15nC typ (ID = 25A; VDS = 400V; VGS = 10V; Tj = 25°C)
• Recovered charge is 125nC typ (IS = 25A; dIS/dt = -1000A/µs; VGS = 0V; VDS = 400V)
• 3 leads SOT429 package, junction temperature range from -55 to 175°C