MMSF3P02HDR2G

The MMSF3P02HDR2G is a P-channel miniature surface-mount Power MOSFET offers ultra-low RDS (ON) and true logic level performance. It has capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. It is designed for use in low voltage, high speed switching applications where power efficiency is important. It is suitable for DC-to-DC converters, power management in portable and battery powered products such as printers, cellular and cordless phones. It is also used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Ultra low RDS (ON) provides higher efficiency and extends battery life
• Logic level gate drive - can be driven by logic ICs
• Miniature surface-mount package (saves board space)
• Diode is characterized for use in bridge circuits
• Diode exhibits high speed, with soft recovery
• IDSS specified at elevated temperature
• Avalanche energy specified
• Mounting information for SO-8 package provided
• -55 to 150°C Operating temperature range