NDP6060
MOSFET de Potencia, Canal N, 60 V, 48 A, 0.025 ohm, TO-220AB, Agujero Pasante
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| Cantidad | Precio en USD |
|---|---|
| 1+ | $4.310 |
| 10+ | $2.500 |
| 25+ | $2.470 |
| 50+ | $2.450 |
| 100+ | $2.410 |
| 250+ | $2.300 |
| 500+ | $2.180 |
Información del producto
Resumen del producto
The NDP6060 is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
- Critical DC electrical parameters specified at elevated temperature
- High density cell design for extremely low RDS (ON)
Especificaciones técnicas
0
60
0.025
TO-220AB
0
2.9
3Pines
-
-
Canal N
48
0
Agujero Pasante
10
100
175
-
Lead (27-Jun-2024)
Documentos técnicos (3)
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