IRLR2908TRPBF
MOSFET de Potencia, Canal N, 80 V, 30 A, 0.028 ohm, TO-252AA, Montaje Superficial
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| Cantidad | Precio en USD |
|---|---|
| 1+ | $0.688 |
| 10+ | $0.688 |
| 25+ | $0.688 |
| 50+ | $0.688 |
| 100+ | $0.688 |
| 250+ | $0.688 |
| 500+ | $0.631 |
| 1000+ | $0.631 |
Información del producto
Resumen del producto
The IRLR2908TRPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET is a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Ultra-low ON-resistance
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
- Logic level
Especificaciones técnicas
N Channel
80
0
TO-252AA
10
2.5
3Pines
-
MSL 1 - Unlimited
0
30
0.028ohm
Surface Mount
0
120
175
-
No SVHC (21-Jan-2025)
Documentos técnicos (2)
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